AUIRLR024NTR【PDF 1/13 页】MOSFET N-CH 55V 17A DPAK

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PD- 96348

Features

Advanced Planar Technology

Low On-Resistance

AUTOMOTIVE GRADE

AUIRLR024N

AUIRLU024N

HEXFET ? Power MOSFET

Logic-Level Gate Drive

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

V (BR)DSS

R DS(on) max.

I D

55V

0.065 ?

17A

Lead-Free, RoHS Compliant

Automotive Qualified *

Description

Specifically designed for Automotive applications, this

Cellular design of HEXFET? Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined with

the fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

D-Pak

AUIRLR024N

I-Pak

AUIRLU024N

provides the designer with an extremely efficient and

reliable device for use in Automotive and a wide variety of

other applications.

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still

air conditions. Ambient temperature (T A ) is 25°C, unless otherwise specified.

Parameter

Max.

Units

I D @ T C = 25°C

Continuous Drain Current, V GS @ 10V

I D @ T C = 100°C

I DM

P D @T C = 25°C

V GS

E AS

I AR

E AR

dv/dt

Continuous Drain Current, V GS @ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

0.3

± 16

4.5

5.0

W/°C

V/ns

T J

T STG

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

-55 to + 175

300 (1.6mm from case )

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

R θ JC

Junction-to-Case

–––

3.3

R θ JA

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

–––

110

°C/W

HEXFET ? is a registered trademark of International Rectifier.

* Qualification standards can be found at http://www.irf.com/

www.irf.com

01/18/11

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